Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior

Title
Pt/Ti/Al2O3/Al tunnel junctions exhibiting electroforming-free bipolar resistive switching behavior
Authors
정두석정병기Hermann Kohlstedt
Keywords
tunnel junction; resistive switching; electroforming; Memory device; RRAM
Issue Date
2011-09
Publisher
Solid-state electronics
Citation
VOL 63, NO 1, 1-4
Abstract
We investigated electroforming-free bipolar resistive switching behavior in Pt/Ti/Al2O3/Al tunnel junctions where the Al2O3 tunnel barrier was naturally formed on Al in air. Various compliance current values for the junction’s set switching successfully lead to various resistance values in its low resistance state, suggesting the possibility for multi-level-operation. A mechanism for the bipolar switching is qualitatively discussed in terms of the modulation of the tunnel barrier by the reactive Ti layer on top of the barrier.
URI
http://pubs.kist.re.kr/handle/201004/40168
ISSN
0038-1101
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KIST Publication > Article
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