GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER

Title
GROWTH OF HIGH-QUALITY THIN InSb FILMS (<0.6 μm) GROWN ON GaAs SUBSTRATE WITH InxAl1-xSb CONTINUOUSLY GRADED BUFFER
Authors
신상훈송진동김태근
Keywords
MBE; InAlSb; grading; Epitaxy
Issue Date
2011-07
Publisher
2011 International Forum on Functional materials
Citation
, 570-570
URI
http://pubs.kist.re.kr/handle/201004/40191
Appears in Collections:
KIST Publication > Conference Paper
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