Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots

Title
Growth of high-quality InSb layer on (001) Si substrate with an initial intermediate-layer of InAs quantum dots
Authors
임주영송진동최원준안재평양해승
Keywords
InAs; InSb; Si; quantum dots; silicon
Issue Date
2011-09
Publisher
Physica Status Solidi. A, Applications and Materials Science
Citation
VOL 208, NO 9, 2104-2107
Abstract
In this study, we have attempted a growth of InSb film on the cost-effective, (001)-Si substrate inserting a thin intermediatelayer of InAs quantum dots (QDs) at the InSb/Si interface. Analysis of the interface region using transmission electron microscopy reveals that, during the subsequent InSb-growth process, InAs QDs have disappeared leaving instead a thin interlayer of InAs. The resulting 2.8-mm-thick InSb film on (001) Si is found to have an electron mobility of 40 907 cm2/Vs at 300 K, which turned out to be the highest value for InSb with comparable thickness grown on Si substrate.
URI
http://pubs.kist.re.kr/handle/201004/40253
ISSN
1862-6300
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KIST Publication > Article
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