Rashba effect induced magnetoresistance in an InAs heterostructure

Title
Rashba effect induced magnetoresistance in an InAs heterostructure
Authors
박윤호구현철장준연한석희엄종화
Keywords
Rashba effect; Magnetoresistance; Spin filtering; Quantum well
Issue Date
2011-09
Publisher
Thin solid films
Citation
VOL 519, NO 23, 8203-8206
Abstract
The Rashba field in a quantum channel produces spin splitting and population imbalance between spin-up and -down electrons. The channel resistance depends on the alignment between the applied field and the Rashba field because the applied magnetic field causes different mobilities for two types of spins. With an applied field of 2 T, the mobility difference between spin-up and -down electrons is 0.75%.
URI
http://pubs.kist.re.kr/handle/201004/40341
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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