Peculiar Temperature-Power Dependence of AlGaAs/GaAs Multi Quantum Well

Title
Peculiar Temperature-Power Dependence of AlGaAs/GaAs Multi Quantum Well
Authors
하싸안송진동최원준조남기이정일
Keywords
Multi Quantum Well; Power Law Dependence; Carrier Thermodynamics; Photoluminescence; Critical Exciton Temperature
Issue Date
2011-07
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 11, NO 7, 6072-6075
Abstract
The dependence of the integrated photoluminescence on the excitation power intensity in Al0 3Ga0 7As/GaAs multi quantum well is studied. Four peaks are found in the photoluminescence spectra, which are corresponding to the four quantum wells in the sample. The temperature dependence of the exponent α of the power law shows peculiar behavior for the quantum well of width 11.2 nm (peak C). The value of the exponent exceeds the quadratic value predicted by the steady state model near room temperature. All other peaks shows linear dependence in the low temperature range which switches to super linear in the high temperature range with values of α less than 2. Carriers thermal capture and re-trapping is discussed. The presented results are a sign of thermal dissociation of exciton in quantum well near room temperature. The peculiar behavior is attributed to the excess flow of the charge carriers to this QW by thermal escape from other QWs, and also due to excess free carriers because of exciton dissociation.
URI
http://pubs.kist.re.kr/handle/201004/40385
ISSN
1533-4880
Appears in Collections:
KIST Publication > Article
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