Temperature-dependent energy band gap variation in self-organiz ed InAs quantum dots

Title
Temperature-dependent energy band gap variation in self-organiz ed InAs quantum dots
Authors
여인아송진동이정일
Keywords
InAs; quantum dots; temperature-dependence; photoluminescence; Fan equation
Issue Date
2011-10
Publisher
Applied physics letters
Citation
VOL 99, NO 15, 151909-1-151909-3
Abstract
We investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models.
URI
http://pubs.kist.re.kr/handle/201004/40431
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE