Full metadata record

DC FieldValueLanguage
dc.contributor.author여인아-
dc.contributor.author송진동-
dc.contributor.author이정일-
dc.date.accessioned2015-12-03T00:40:36Z-
dc.date.available2015-12-03T00:40:36Z-
dc.date.issued201110-
dc.identifier.citationVOL 99, NO 15, 151909-1-151909-3-
dc.identifier.issn0003-6951-
dc.identifier.other35680-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/40431-
dc.description.abstractWe investigated the temperature-dependent variation of the photoluminescence emission energy of self-organized InAs/GaAs quantum dots (QDs) grown by conventional Stranski-Krastanov (SK) molecular beam epitaxy and migration-enhanced molecular beam epitaxy (MEMBE) and that of MEMBE InAs QDs in a symmetric and an asymmetric In0.2Ga0.8As/GaAs well. The temperature-dependent energy variation of each QD is analyzed in low and high temperature regions, including a sigmoidal behavior of conventional SK quantum dots with the well-known Varshni and semi-empirical Fan models.-
dc.publisherApplied physics letters-
dc.subjectInAs-
dc.subjectquantum dots-
dc.subjecttemperature-dependence-
dc.subjectphotoluminescence-
dc.subjectFan equation-
dc.titleTemperature-dependent energy band gap variation in self-organiz ed InAs quantum dots-
dc.typeArticle-
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE