A comparative study of solution based CIGS thin film growth on different glass substrates
- A comparative study of solution based CIGS thin film growth on different glass substrates
- 박세진; 이은주; 전효상; 안세진; 오민규; 민병권
- CIGS; substrates; Solution processes; solar cells; CuInxGa1-xSeyS2-y
- Issue Date
- Applied surface science
- VOL 258, NO 1, 120-125
- CuInxGa1−xSeyS2−y (CIGS) thin films were synthesized on glass substrates by a paste coating of Cu, In, and
Ga precursor solution with a three-step heat treatment process: oxidation, sulfurization, and selenization.
In particular, morphological changes of CIGS films for each heat treatment step were investigated with
respect to the kinds of glass substrates: bare, Mo-coated, and F-doped SnO2 (FTO) soda-lime glasses.
Very high quality CIGS film with large grains and low degree of porosity was obtained on the bare glass
substrate. Similar morphology of CIGS film was also acquired on the Mo-coated glass except the formation
of an undesired Mo oxide interfacial layer due to the partial oxidation of Mo layer during the first heat
treatment under ambient conditions. On the other hand, CIGS film with much smaller grains and higher
degree of porosity was gained when FTO glass was used as a substrate, resulting in slight solar to electricity
conversion behavior (0.20%). Higher power conversion efficiency (1.32%) was attained by the device with
the CIGS film grown on Mo-coated glass in spite of the presence of a Mo oxide impurity layer.
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