Raman Studies of InGaAlAs Digital Alloys

Title
Raman Studies of InGaAlAs Digital Alloys
Authors
민경인노희석송진동최원준이용탁
Keywords
digital-alloy; InGaAlAs; Raman; Raman scattering; Superlattice
Issue Date
2011-10
Publisher
Journal of the Korean Physical Society
Citation
VOL 59, NO 4, 2801-2085
Abstract
Optical phonons in InGaAlAs digital alloy structures are systematically studied in terms of (In0.53Ga0.47As)l/(In0.52Al0.48As)l (period length l = 1, 2, 4, 5) and (In0.53Ga0.47As)1−z/(In0.52 Al0.48As)z (composition z = 0.2, 0.4, 0.6, 0.8) short-period superlattices. Raman spectra reveal GaAs-like and AlAs-like longitudinal optical (LO) phonons confined in In0.53Ga0.47As and In0.52Al0.48As layers, respectively. InAs-like LO phonons are also observed in the In0.53Ga0.47As and the In0.52Al0.48As layers. The confined GaAs-like LO phonon frequency is sensitive to the In0.53Ga0.47As layer thickness and shifts downward by ~7 cm−1 with decreasing layer thickness, showing excellent agreement with the LO phonon dispersion for bulk GaAs. Importantly, the confined AlAs-like LO phonon frequency is not sensitive to the In0.52Al0.48As layer thickness, indicating the presence of high-quality interface boundaries between the In0.53Ga0.47As and the In0.52Al0.48As layers.
URI
http://pubs.kist.re.kr/handle/201004/40454
ISSN
0374-4884
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