Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering

Title
Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering
Authors
김홍석박종극이욱성백영준
Keywords
cubic boron nitride; Compressive residual stress; hydrogen addition; Ar incorporation
Issue Date
2011-09
Publisher
Thin solid films
Citation
VOL 519, NO 22, 7871-7874
Abstract
The effect of hydrogen on compressive residual stress of cubic boron nitride (cBN) was investigated. The deposition was performed by unbalanced magnetron sputtering of a hexagonal boron nitride (hBN) target connected to radio-frequency electric power of 400 W. Up to 2 sccm of hydrogen was added to a gas mixture of argon and nitrogen flowing at 9 and 1 sccm, respectively. The compressive stress rapidly decreased from 10.5 GPa to 3 GPa, with increasing hydrogen flow up to 1.0 sccm. The cBN fraction in these films, however, remained over 60%, with only a trivial decrease with increasing hydrogen. This reduction was discussed in terms of the relation between the penetration probabilities of hydrogen and argon ions into the film, which was main origin of compressive residual stress of the hBN layer.
URI
http://pubs.kist.re.kr/handle/201004/40644
ISSN
0040-6090
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KIST Publication > Article
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