Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering
- Variation of residual stress in cubic boron nitride film caused by hydrogen addition during unbalanced magnetron sputtering
- 김홍석; 박종극; 이욱성; 백영준
- cubic boron nitride; Compressive residual stress; hydrogen addition; Ar incorporation
- Issue Date
- Thin solid films
- VOL 519, NO 22, 7871-7874
- The effect of hydrogen on compressive residual stress of cubic boron nitride (cBN) was investigated. The
deposition was performed by unbalanced magnetron sputtering of a hexagonal boron nitride (hBN) target
connected to radio-frequency electric power of 400 W. Up to 2 sccm of hydrogen was added to a gas mixture
of argon and nitrogen flowing at 9 and 1 sccm, respectively. The compressive stress rapidly decreased from
10.5 GPa to 3 GPa, with increasing hydrogen flow up to 1.0 sccm. The cBN fraction in these films, however,
remained over 60%, with only a trivial decrease with increasing hydrogen. This reduction was discussed in
terms of the relation between the penetration probabilities of hydrogen and argon ions into the film, which
was main origin of compressive residual stress of the hBN layer.
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