Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
- Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
- 정유진; 전윤수; 김승한; 이상렬
- IZO; HIZO; Carrier concentration; Stability
- Issue Date
- Thin solid films
- VOL 519, NO 20, 6881-6883
- We report on the fabrication and performance of amorphous oxide thin film transistors with indium zinc
oxide (In2O3:ZnO=1:1 mol%) and various ratios of hafnium-doped indium zinc oxide (IZO:HfO2=2:0, 0.3,
0.7, and 1.1 mol%) deposited at the same deposition conditions for semiconductor channel layer. The carrier
concentration (Ncp) of the HIZO films was further decreased from 7.08×1017 to 5.0×1016 cm−3. This
indicates that Hf metal cations effectively suppress carrier generation due to the high electron negativity (1.3)
of Hf. In addition, we compared bias instability of both devices after bias temperature stress (BTS) test under
on-current state at VDS of 10 V and IDS of 3 μA at 60 °C for 420 min. It was found that the Hf metal cations could
be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the
carrier generation in the ZnO-based system.
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