Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Title
Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering
Authors
정유진전윤수김승한이상렬
Keywords
IZO; HIZO; Carrier concentration; Stability
Issue Date
2011-08
Publisher
Thin solid films
Citation
VOL 519, NO 20, 6881-6883
Abstract
We report on the fabrication and performance of amorphous oxide thin film transistors with indium zinc oxide (In2O3:ZnO=1:1 mol%) and various ratios of hafnium-doped indium zinc oxide (IZO:HfO2=2:0, 0.3, 0.7, and 1.1 mol%) deposited at the same deposition conditions for semiconductor channel layer. The carrier concentration (Ncp) of the HIZO films was further decreased from 7.08×1017 to 5.0×1016 cm−3. This indicates that Hf metal cations effectively suppress carrier generation due to the high electron negativity (1.3) of Hf. In addition, we compared bias instability of both devices after bias temperature stress (BTS) test under on-current state at VDS of 10 V and IDS of 3 μA at 60 °C for 420 min. It was found that the Hf metal cations could be effectively incorporated in the IZO thin films as a suppressor against both the oxygen deficiencies and the carrier generation in the ZnO-based system.
URI
http://pubs.kist.re.kr/handle/201004/40646
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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