Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity
- Sn-induced low-temperature growth of Ge nanowire electrodes with a large lithium storage capacity
- 고영대; 강진구; 이광희; 박재관; 박경수; Yun-Ho Jin; Dong-Wan Kim
- germanium; nanowires; Li ion battery; anodes
- Issue Date
- VOL 3, NO 8, 3371-3375
- We herein present the synthesis of germanium (Ge) nanowires on Au-catalyzed low-temperature
substrates using a simple thermal Ge/Sn co-evaporation method. Incorporation of a low-melting point
metal (Sn) enables the efficient delivery of Ge vapor to the substrate, even at a source temperature
below 600 ℃. The as-synthesized nanowires were found to be a core/shell heterostructure, exhibiting
a uniform single crystalline Ge sheathed within a thin amorphous germanium suboxide (GeOx) layer.
Furthermore, these high-density Ge nanowires grown directly on metal current collectors can offer
good electrical connection and easy strain relaxation due to huge volume expansion during Li ion
insertion/extraction. Therefore, the self-supported Ge nanowire electrodes provided excellent large
capacity with little fading upon cycling (a capacity of ~900 mA h g-1 at 1C rate).
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