Stress Evolution During the Oxidation of Silicon Nanowires in the Sub-10nm Diameter Regime
- Stress Evolution During the Oxidation of Silicon Nanowires in the Sub-10nm Diameter Regime
- 김병현; 마우루디; 박미나; 김규봉; 이광렬; 정용재
- Si nanowire; oxidation; MD simulation
- Issue Date
- Applied physics letters
- VOL 99, NO 14, 143115-1-143115-3
- Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with
diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between
the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the
diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of
the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface
oxidation, resulting in a lower compressive stress at the interface. These results explain the
experimental observation of full oxidation of very thin Si-NWs.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.