Stress Evolution During the Oxidation of Silicon Nanowires in the Sub-10nm Diameter Regime

Title
Stress Evolution During the Oxidation of Silicon Nanowires in the Sub-10nm Diameter Regime
Authors
김병현마우루디박미나김규봉이광렬정용재
Keywords
Si nanowire; oxidation; MD simulation
Issue Date
2011-10
Publisher
Applied physics letters
Citation
VOL 99, NO 14, 143115-1-143115-3
Abstract
Using a reactive molecular dynamics simulation, the oxidation of Si nanowires (Si-NWs) with diameters of 5, 10, and 20 nm was investigated. The compressive stress at the interface between the oxide and the Si core decreased with increasing curvature in the sub-10 nm regime of the diameter, in contrast to the theory of self-limiting oxidation where rigid mechanical constraint of the Si core was assumed. The Si core of the thinner Si-NW was deformed more with surface oxidation, resulting in a lower compressive stress at the interface. These results explain the experimental observation of full oxidation of very thin Si-NWs.
URI
http://pubs.kist.re.kr/handle/201004/40676
ISSN
0003-6951
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KIST Publication > Article
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