The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors
- The relationship between processing parameters and the performance of novel amorphous silicon-indium-zinc oxide thin film transistors
- 정유진; 김승한; 조은아; 장건익; 이상렬
- Thin film transistor; SiInZnO; Process parameter; Oxide
- Issue Date
- Current applied physics
- VOL 11, NO 4, 132-134
- The processing parameter dependence of the performance of amorphous silicon-indium-zinc-oxide
(a-SIZO) films was systematically investigated for Thin Film Transistors (TFTs). The SIZO thin films
were prepared on a SiO2/p-Si substrate using 2 wt% Si-doped IZO (2SIZO) ceramic target through an RFmagnetron
sputtering process with various process parameters, such as RF power and oxygen partial
pressure. The composition analysis of the target was measured by Induced-Coupled Plasma (ICP) and XRay
fluorescence (XRF). The electrical performance of 2SIZO films were relatively changed by the processing
parameters. The electrical performance of the 2SIZO-TFTs confirmed that mFE decreaseswith an
increasing oxygen partial pressure and decreasing RF-power.
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