Effect of oxygen on the threshold voltage of a-IGZO TFT

Title
Effect of oxygen on the threshold voltage of a-IGZO TFT
Authors
정유진전윤수김승한이상렬
Keywords
a-IGZO; Oxide TFT; O2 partial pressure; Threshold voltage
Issue Date
2011-07
Publisher
JOURNAL OF ELECTRICAL ENGINEERING & TECHNOLOGY
Citation
VOL 6, NO 4, 539-542
Abstract
Thin-film transistors (TFTs) are fabricated using an amorphous indium gallium zinc oxide (a-IGZO) channel layer by rf-magnetron sputtering. Oxygen partial pressure significantly changed the transfer characteristics of a-IGZO TFTs. Measurements performed on а-IGZO TFT show the change of threshold voltage in the transistor channel layer and electrical properties with varying O2 ratios. The device performance is significantly affected by adjusting the O2 ratio. This ratio is closely related with the modulation generation by reducing the localized trapping carriers and defect centers at the interface or in the channel layer.
URI
http://pubs.kist.re.kr/handle/201004/40747
ISSN
1975-0102
Appears in Collections:
KIST Publication > Article
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