Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires

Title
Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
Authors
박태언민병철김일수양지은조문호장준연최헌진
Keywords
Silicon; nanowire; phosphorus; impurity band conduction; magnetoresistance; exchange interaction
Issue Date
2011-09
Publisher
Nano letters
Citation
VOL 11, NO 11, 4730-4735
Abstract
Heavily phosphorus-doped silicon nanowires (Si NWs) show intriguing transport phenomena at low temperature. As we decrease the temperature, the resistivity of the Si NWs initially decreases, like metals, and starts to increase logarithmically below a resistivity minimum temperature (Tmin), which is accompanied by (i) a zero-bias dip in the differential conductance and (ii) anisotropic negative magnetoresistance (MR), depending on the angle between the applied magnetic field and current flow. These results are associated with the impurity band conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized spins are coupled antiferromagnetically at low temperature via the exchange interaction.
URI
http://pubs.kist.re.kr/handle/201004/40783
ISSN
1530-6984
Appears in Collections:
KIST Publication > Article
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