Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
- Exchange-Induced Electron Transport in Heavily Phosphorus-Doped Si Nanowires
- 박태언; 민병철; 김일수; 양지은; 조문호; 장준연; 최헌진
- Silicon; nanowire; phosphorus; impurity band conduction; magnetoresistance; exchange interaction
- Issue Date
- Nano letters
- VOL 11, NO 11, 4730-4735
- Heavily phosphorus-doped silicon nanowires
(Si NWs) show intriguing transport phenomena at low temperature.
As we decrease the temperature, the resistivity of the Si
NWs initially decreases, like metals, and starts to increase logarithmically
below a resistivity minimum temperature (Tmin),
which is accompanied by (i) a zero-bias dip in the differential conductance
and (ii) anisotropic negative magnetoresistance (MR),
depending on the angle between the applied magnetic field and
current flow. These results are associated with the impurity band
conduction and electron scattering by the localized spins at phosphorus donor states. The analysis on the MR reveals that the localized
spins are coupled antiferromagnetically at low temperature via the exchange interaction.
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