Study on the Electrical Properties of Amorphous HfInZnO TFTs Depending on Sputtering Power

Title
Study on the Electrical Properties of Amorphous HfInZnO TFTs Depending on Sputtering Power
Authors
유동윤정유진김도형주병권이상렬
Keywords
A-HIZO; Oxide semiconductor; RF power; Oxygen partial pressure; Threshold voltage
Issue Date
2011-08
Publisher
전기전자재료학회논문지 (Journal of KIEEME)
Citation
VOL 24, NO 8, 674-677
Abstract
The dependency of sputtering power on the electrical performances in amorphous HIZO-TFT (hafnium-indium-zinc-oxide thin film transistors) has been investigated. The HIZO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different sputtering power at room temperature. TOF-SIMS (time of flight secondary ion mass spectrometry) was performed to confirm doping of hafnium atom in IZO film. The field effect mobility (μFE) increased and threshold voltage (Vth) shifted to negative direction with increasing sputtering power. This result can be attributed to the high energy particles knocking-out oxygen atoms. As a result, oxygen vacancies generated in HIZO channel layer with increasing sputtering power resulted in negative shift in Vth and increase in on-current.
URI
http://pubs.kist.re.kr/handle/201004/40784
ISSN
1226-7945
Appears in Collections:
KIST Publication > Article
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