High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy

Title
High-power 745-nm Laser Diode Utilizing InP/InGaP Quantum Structures Grown by Using Migration Enhanced Epitaxy
Authors
하승규송진동한일기고대영김수연이은혜
Keywords
quantum dots; quantum dashes; laser diodes
Issue Date
2011-11
Publisher
Journal of the Korean Physical Society
Citation
VOL 59, NO 5, 3089-3092
Abstract
We report the performance of 745-nm laser diodes (LDs) utilizing InP/InGaP quantum structures (quantum dots + quantum dashes) grown by using migration-enhanced epitaxy method. The photoluminescence of the LD structures before the fabrication of the LDs shows two peaks, around 800 nm and 750 nm, attributed to quantum dots and dashes, respectively. The lasing wavelength is thought to the result from quantum dashes instead of ground states of QDs. The pulse optical power of the LD is above 600 mW at room temperature.
URI
http://pubs.kist.re.kr/handle/201004/40785
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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