Effect of proton irradiation on electrical properties of a-As2S3

Title
Effect of proton irradiation on electrical properties of a-As2S3
Authors
가우탐A. ThakurD. K. ShuklaH. J. Shin채근화K. P. SinghN. Goyal
Keywords
Chalcogenide semiconductor; Proton irradiation; DC conductivity; AC conductivity
Issue Date
2011-06
Publisher
Journal of non-crystalline solids
Citation
VOL 357, NO 11-13, 2340-2343
Abstract
This paper reports the effect of proton irradiation on the electrical properties of a-As2S3 in the temperature range of 323–418 K and frequency range 0.1–100 kHz. The variation of transport property is studied with proton irradiation dose (1×1013 ions/㎠ and 1×1015 ions/㎠). It has been observed that proton irradiation changes the dc conductivity (σdc), dc activation energy (ΔEdc) and ac conductivity (σac(ω)). The σdc and σac (ω) increases with dose of proton irradiation. The value of frequency exponent (s) decreases with the temperature and irradiation dose. These results are explained in terms of change in density of defect states in these glasses.
URI
http://pubs.kist.re.kr/handle/201004/40797
ISSN
0022-3093
Appears in Collections:
KIST Publication > Article
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