An electrical switching device controlled by a magnetic field-dependent impact ionization process

Title
An electrical switching device controlled by a magnetic field-dependent impact ionization process
Authors
이진서주성중김태엽김기현이긍원홍진기신경호
Issue Date
2010-12
Publisher
Applied physics letters
Citation
VOL 97, NO 25, 253505-1-253505-3
Abstract
An abrupt change of conductance at a threshold magnetic field was observed in a device consisting of a nonmagnetic narrow-gap semiconductor. The conductance varies more than 25 times as the magnetic field increases. The threshold magnetic field can be tuned using a bias voltage from zero to several hundred Gauss. This large magnetoconductance effect is caused by the magnetic field-dependent impact ionization process. A theoretical model is proposed, and calculations based on this model simulate the experimental results closely. This device may be a good candidate for an electrical switching device controlled by a magnetic field.
URI
http://pubs.kist.re.kr/handle/201004/40812
ISSN
0003-6951
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KIST Publication > Article
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