Correlation between the stability and trap parameters of amorphous oxide thin film transistors

Title
Correlation between the stability and trap parameters of amorphous oxide thin film transistors
Authors
정유진박기호조은아최준영김보슬유동윤장건익이상렬
Keywords
thin film transistor; stability; Hf-In-Zn-O
Issue Date
2012-03
Publisher
Microelectronic engineering
Citation
VOL 91, 50-53
Abstract
We report on the temperature dependence phenomena in stability and trap related parameters in amorphous-hafnium–indium–zinc-oxide (a-HIZO) thin film transistors (TFTs) with different Hf-ratio. The optimized 7HIZO TFT shows large lFE of >11.1 ㎠/V s and good stability based in large falling-rate (RF) of 0.18 eV/V, trapping-time (τ) of 1.0 x 107 s and small subthreshold-swing (SS) of 0.74 V/dec. Relation between thermally activated energy and Hf-ratio clearly indicated Hf acted as carrier suppressors since the increase of Hf-ratio in a-HIZO films. The Hf greatly affected the overall device performance as well as the stability.
URI
http://pubs.kist.re.kr/handle/201004/40818
ISSN
0167-9317
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KIST Publication > Article
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