Transparent conducting oxide electrodes for novel metal oxide gas sensors

Title
Transparent conducting oxide electrodes for novel metal oxide gas sensors
Authors
심영석문희규김도홍장호원강종윤윤영수윤석진
Keywords
Gas sensors; Transparent conducting oxides; Indium?in oxide; Aluminum-doped zinc oxide; Ohmic contact
Issue Date
2011-12
Publisher
Sensors and actuators. B, Chemical
Citation
VOL 160, NO 1, 357-363
Abstract
We report fabrication and gas sensing properties of semiconducting metal oxide gas sensors using conducting oxide electrodes. Indium–tin oxide (ITO) and aluminum-doped zinc oxide (AZO) films are used to replace Pt electrodes in WO3 or SnO2 thin-film gas sensors. Before and after thermal annealing at 300 ℃ for 3200 min, the resistivity of the ITO film increases from 1.3 × 10−4 to 7.0 × 10−4 Ω cm, whereas the AZO film shows a significant increase in resistivity from 2.0 × 10−3 to 5.1 × 101 Ω cm due to the annihilation of oxygen vacancies in the film. Upon exposure to 50 ppm CO at 300 ℃, WO3 or SnO2 thin-film sensors with ITO interdigitated electrodes (IDEs) on glass substrates display higher responses than sensors with Pt IDEs, attributed to the low-resistance ohmic contacts between the electrode (ITO) and the sensing material (WO3 or SnO2). The reproducible response, the concentration-dependent modulation in sensitivity, and a sub-ppm detection limit indicates the reliable operation of sensors made with ITO IDEs. The high transmittance, exceeding 75%, of the sensors at visible wavelengths holds promise for future applications to transparent gas sensors.
URI
http://pubs.kist.re.kr/handle/201004/40862
ISSN
0925-4005
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE