Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread
- Influence of substrate temperature on the electrical and optical properties of Ga-doped ZnO thin films fabricated by continuous composition spread
- 정근; 최원국; 윤석진; 김현재; 최지원
- Electrical conductivity; Optical properties; ZnO; Electrodes
- Issue Date
- Ceramics international
- VOL 38S, S605-S608
- The electrical and optical properties of Ga-doped ZnO (GZO) thin films deposited at different substrate temperatures have been studied by a
continuous composition spread (CCS) method. The full range of GZO compositions deposited at different substrate temperatures was explored to
find excellent electrical and optical properties. Optimized GZO thin films with a low resistivity of 9.6 x 10-4 Ω cm and an average transmittance
above 89% in the 400–700 nm wavelength regions were able to be formed at a substrate temperature of 100 ℃. Optimized composition of the GZO
thin film which had the lowest resistivity and highest transmittance was found at 0.8 wt% Ga2O3 doped ZnO.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.