Schottky and tunneling behavior of Fe/MgO/Ge(100) structures

Title
Schottky and tunneling behavior of Fe/MgO/Ge(100) structures
Authors
J.B.LaloeM.C.Hickey장준연J.S.Moodera
Keywords
Schottky barrier; Tunneling transport; spin injection; Ge
Issue Date
2010-12
Publisher
Applied physics letters
Citation
VOL 97, NO 22, 222105-1-222105-3
Abstract
We investigated interface and electrical properties of Ge-based Schottky and tunnel diodes with crystalline MgO barriers. Following a simple cleaning procedure not requiring a high-temperature anneal, x-ray data indicated smooth interfaces and that the MgO tunnel barrier was highly textured. Transport characteristics were fitted using a self-consistent field Simmons–Schottky current-voltage model, yielding the Schottky and tunnel barrier heights for the devices and the distribution of tunneling currents. Considering the Fermi-level depinning and the ratio of Schottky to tunneling currents for each barrier thickness, we find that a MgO thickness of 15 Å yields the best transport properties in this system.
URI
http://pubs.kist.re.kr/handle/201004/40884
ISSN
0003-6951
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KIST Publication > Article
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