Electronic structure analysis of twin and superlattice in Ga-doped ZnO using monochromated EELS

Title
Electronic structure analysis of twin and superlattice in Ga-doped ZnO using monochromated EELS
Authors
장혜정윤상원유태환안재평
Keywords
ZnO; EELS; bandgap; TEM
Issue Date
2011-11
Publisher
전자현미경학회
Abstract
Indium–tin-oxide (ITO) thin films prepared by magnetron sputtering deposition methods are in practical use for most thin-film transparent electrode applications at this present. However, the difficulty in supply of In because of the high cost and scarcity of indium caused development of substitute materials for ITO transparent electrodes. It has been noted that the best, and only practical, indium-free candidate for an alternative material to ITO is impurity-doped ZnO such as Al- or Ga-doped ZnO (AZO or GZO). Here, we focused on the fundamental effect of the dopants on the microstructure and the electronic structure of the GZO target material. Particularly the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO.
URI
http://pubs.kist.re.kr/handle/201004/40888
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KIST Publication > Conference Paper
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