Electronic structure analysis of twin and superlattice in Ga-doped ZnO using monochromated EELS
- Electronic structure analysis of twin and superlattice in Ga-doped ZnO using monochromated EELS
- 장혜정; 윤상원; 유태환; 안재평
- ZnO; EELS; bandgap; TEM
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- Indium–tin-oxide (ITO) thin films prepared by magnetron sputtering deposition methods are in practical use for most thin-film transparent electrode applications at this present. However, the difficulty in supply of In because of the high cost and scarcity of indium caused development of substitute materials for ITO transparent electrodes. It has been noted that the best, and only practical, indium-free candidate for an alternative material to ITO is impurity-doped ZnO such as Al- or Ga-doped ZnO (AZO or GZO). Here, we focused on the fundamental effect of the dopants on the microstructure and the electronic structure of the GZO target material. Particularly the reasons of high conductivity through the characterization of plane defects, crystal orientation, doping contents, crystal structure in Zn1-xGaxO.
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