Structural and electrical properties of Bi2O3-Nb2O5 thin films grown at low temperatures by pulsed laser deposition

Title
Structural and electrical properties of Bi2O3-Nb2O5 thin films grown at low temperatures by pulsed laser deposition
Authors
선종우강이승김진성정미리남산성태근강종윤김종희
Keywords
Laser deposition; Thin films; Dielectrics
Issue Date
2011-08
Publisher
Acta materialia
Citation
VOL 59, NO 14, 5434-5439
Abstract
The dielectric constant (εr) of the films grown at 100 ℃ increased as the beam energy density increased and a saturated value of 80 was obtained for the film grown under 6.0 J cm-2. The larger er value was attributed to the increased amount of nano-sized Bi3NbO7 crystals. The er values also increased with the beam energy density for films grown at 300 ℃ and a very high er value of 135.6 with a low loss of 3.0% at 100 kHz was obtained for the film grown at 300 ℃ under a beam density of 3.0 J cm-2. The crystalline BiNbO4 phase developed, but the amount of Bi3NbO7 crystals decreased as the beam energy density increased, indicating that the increased er values of the films grown at 300 ℃ could be due to the formation of the crystalline BiNbO4 phase. The electrical properties of the films grown at 300 ℃under a beam density of 3.0 J cm-2 were considerably influenced by the oxygen partial pressure (OPP) during annealing. The film annealed at 300 ℃ under a 50.0 torr OPP exhibited a low leakage current density of 5.4 x 10-9 A cm-2 at 0.3 MV cm-1 with a relatively high breakdown field of 0.4 MV cm-1.
URI
http://pubs.kist.re.kr/handle/201004/40898
ISSN
1359-6454
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KIST Publication > Article
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