Structural and electrical properties of Bi2O3-Nb2O5 thin films grown at low temperatures by pulsed laser deposition
- Structural and electrical properties of Bi2O3-Nb2O5 thin films grown at low temperatures by pulsed laser deposition
- 선종우; 강이승; 김진성; 정미리; 남산; 성태근; 강종윤; 김종희
- Laser deposition; Thin films; Dielectrics
- Issue Date
- Acta materialia
- VOL 59, NO 14, 5434-5439
- The dielectric constant (εr) of the films grown at 100 ℃ increased as the beam energy density increased and a saturated value of 80 was
obtained for the film grown under 6.0 J cm-2. The larger er value was attributed to the increased amount of nano-sized Bi3NbO7 crystals.
The er values also increased with the beam energy density for films grown at 300 ℃ and a very high er value of 135.6 with a low loss of
3.0% at 100 kHz was obtained for the film grown at 300 ℃ under a beam density of 3.0 J cm-2. The crystalline BiNbO4 phase developed,
but the amount of Bi3NbO7 crystals decreased as the beam energy density increased, indicating that the increased er values of the films
grown at 300 ℃ could be due to the formation of the crystalline BiNbO4 phase. The electrical properties of the films grown at 300 ℃under a beam density of 3.0 J cm-2 were considerably influenced by the oxygen partial pressure (OPP) during annealing. The film
annealed at 300 ℃ under a 50.0 torr OPP exhibited a low leakage current density of 5.4 x 10-9 A cm-2 at 0.3 MV cm-1 with a relatively
high breakdown field of 0.4 MV cm-1.
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