Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots

Title
Effect of InxGa1-xAs strain release layers on the microstructural and interband transition properties of InAs/GaAs quantum dots
Authors
임재구박용주박영민송진동최원준한일기조운조이정일T.W. KimH S KimC G Park
Keywords
Nanostructures; Atomic layer epitaxy; Semiconducting III-V materials
Issue Date
2005-03
Publisher
Journal of crystal growth
Citation
VOL 275, 415-421
URI
http://pubs.kist.re.kr/handle/201004/40907
ISSN
0022-0248
Appears in Collections:
KIST Publication > Article
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