Applicability of steady state mofel to carrier thermodynamics in InAs quantum dots

Title
Applicability of steady state mofel to carrier thermodynamics in InAs quantum dots
Authors
하싸안코필로프송진동최원준조남기이정일
Keywords
carrier thermodynamics; photoluminescence; InAs quantum dot; steady state model
Issue Date
2011-01
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 11, NO 1, 606-609
Abstract
The carrier thermodynamics of InAs self assembled quantum dot (QD) are investigated. The investigated parameters include the dependence of quantum dot photoluminescence on temperature and the photoluminescence (PL) dependence on the excitation power density. Results are discussed on the basis of steady state model. The model predicts that the photoluminescence integrated intensity has linear dependence on the excitation power density in low temperature range, and super linear in the high temperature range. Our data matches the prediction of the steady state model. In our sample the super linearity starts to take place at T = 150 K and the super linear behavior of the photoluminescence on excitation power density proves that the carrier dynamics in our quantum dot sample are dominated by uncorrelated electron hole pair in the high temperature region.
URI
http://pubs.kist.re.kr/handle/201004/40953
ISSN
1533-4880
Appears in Collections:
KIST Publication > Article
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