Full metadata record

DC FieldValueLanguage
dc.contributor.author하싸안-
dc.contributor.author코필로프-
dc.contributor.author송진동-
dc.contributor.author최원준-
dc.contributor.author조남기-
dc.contributor.author이정일-
dc.date.accessioned2015-12-03T00:42:29Z-
dc.date.available2015-12-03T00:42:29Z-
dc.date.issued201101-
dc.identifier.citationVOL 11, NO 1, 606-609-
dc.identifier.issn1533-4880-
dc.identifier.other34466-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/40953-
dc.description.abstractThe carrier thermodynamics of InAs self assembled quantum dot (QD) are investigated. The investigated parameters include the dependence of quantum dot photoluminescence on temperature and the photoluminescence (PL) dependence on the excitation power density. Results are discussed on the basis of steady state model. The model predicts that the photoluminescence integrated intensity has linear dependence on the excitation power density in low temperature range, and super linear in the high temperature range. Our data matches the prediction of the steady state model. In our sample the super linearity starts to take place at T = 150 K and the super linear behavior of the photoluminescence on excitation power density proves that the carrier dynamics in our quantum dot sample are dominated by uncorrelated electron hole pair in the high temperature region.-
dc.publisherJournal of nanoscience and nanotechnology-
dc.subjectcarrier thermodynamics-
dc.subjectphotoluminescence-
dc.subjectInAs quantum dot-
dc.subjectsteady state model-
dc.titleApplicability of steady state mofel to carrier thermodynamics in InAs quantum dots-
dc.typeArticle-
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE