Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes

Title
Indium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes
Authors
문선영손준호최경진이종남장호원
Keywords
Indium; ohmic contact; GaN-based vertical light-emitting diodes; N-face n-GaN
Issue Date
2011-11
Publisher
Applied physics letters
Citation
VOL 99, NO 20, 202106-1-202106-3
Abstract
We propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 ℃, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes.
URI
http://pubs.kist.re.kr/handle/201004/40970
ISSN
0003-6951
Appears in Collections:
KIST Publication > Article
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