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dc.contributor.author문선영-
dc.contributor.author손준호-
dc.contributor.author최경진-
dc.contributor.author이종남-
dc.contributor.author장호원-
dc.date.accessioned2015-12-03T00:42:34Z-
dc.date.available2015-12-03T00:42:34Z-
dc.date.issued201111-
dc.identifier.citationVOL 99, NO 20, 202106-1-202106-3-
dc.identifier.issn0003-6951-
dc.identifier.other36218-
dc.identifier.urihttp://pubs.kist.re.kr/handle/201004/40970-
dc.description.abstractWe propose indium (In), a low work function and nitride-forming element, as an efficient ohmic contact layer to N-face n-GaN. While conventional Al-based ohmic contacts show severe degradation after annealing at 300 ℃, In-based ohmic contacts display considerable improvement in contact resistivity. The annealing-induced enhancement of ohmic behavior in In-based contacts is attributed to the formation of an InN interfacial layer, which is supported by x-ray photoemission spectroscopy measurements. These results suggest that In is of particular importance for application as reliable ohmic contacts to n-GaN of GaN-based vertical light-emitting diodes.-
dc.publisherApplied physics letters-
dc.subjectIndium-
dc.subjectohmic contact-
dc.subjectGaN-based vertical light-emitting diodes-
dc.subjectN-face n-GaN-
dc.titleIndium as an efficient ohmic contact to N-face n-GaN of GaN-based vertical light-emitting diodes-
dc.typeArticle-
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