Synthesis of Ti3SiC2 by infiltration of molten Si
- Synthesis of Ti3SiC2 by infiltration of molten Si
- 황성식; 한재호; 이동윤; 박상환
- Ti3SiC2; Infiltration; TiCx preform; molten Si
- Issue Date
- Journal of alloys and compounds
- VOL 509, NO 35, L336-L339
- High-purity Ti3SiC2 compounds have been fabricated by infiltration of moltenSi into a precursor, a partially sintered TiCx (x = 0.67) preform. The Si source and the TiCx preform were placed side by side on carbon cloth, and the system was heated to 1550 °C. MoltenSi infiltrated the preform through the carbon cloth, and a direct reaction between TiCx and moltenSi immediately occurred at the reaction temperature to yield pure Ti3SiC2. We could observe phase formation and the microstructure of the bulk products with time, which were investigated by X-ray diffraction (XRD) and scanning electron microscopy (SEM) equipped with energy-dispersive spectroscopy (EDS). Pure Ti3SiC2 compounds were formed on the exterior of the TiCx preform at 1550 °C when the sintered TiCx:Si ingot molar ratio was 3:1.4. At 1550 °C, no other minor phases were detected for any of the sintering time ranges.
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