Influence of reduced substrate shunting current on cell performance in integrated planar solid oxide fuel cells
- Influence of reduced substrate shunting current on cell performance in integrated planar solid oxide fuel cells
- 오건석; 김주선; 최선희; 이대희; 문주호
- Al2O3; IP-SOFC; Substrate resistivity; Shunting current; Robo-dispensing; Integrated planar SOFC
- Issue Date
- Ceramics international
- VOL 38, NO 1, 695-700
- Two-cell arrayed integrated planar solid oxide fuel cells (IP-SOFCs) were fabricated using a robo-dispensing method. Special emphasis was
placed on the influence of reduced shunting current on cell performance. The resistivity of the substrate increased according to a mixture rule of
composites by adding Al2O3 into the substrate of partially stabilized zirconia (PSZ). This strategy, which reduces shunting current through the
substrate, enhances the power output. When the amount of Al2O3 added was more than 26 vol%, however, the Ni anode migrated into the PSZ
substrate to react with Al2O3, which led to performance degradation. In the case of the two-cell arrayed IP-SOFC with a 20 vol%-Al2O3 added to
the PSZ substrate, a reduced shunting current loss improved the power density by 30% compared to that of the Al2O3-free substrate.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.