Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes

Title
Electrical characteristics of Cu-doped In2O3/Sb-doped SnO2 ohmic contacts for high-performance GaN-based light-emitting diodes
Authors
오준호성태연H.G. Hong김경국윤상원안재평
Keywords
GaN; LED; TEM; Cu doping; Light emitting diode; Transparent electrode; SnO2; Ohmic contact
Issue Date
2011-12
Publisher
Journal of electroceramics
Citation
VOL 27, NO 3-4, 109-113
Abstract
We characterized the electrical and chemical properties of Cu-doped In2O3(CIO) (2.5 nm thick)/Sbdoped SnO2(ATO) (250 nm thick) contacts to p-type GaN by means of current-voltage measurement, scanning transmission electron microscope (STEM) and x-ray photoemission spectroscopy (XPS). The CIO/ATO contacts show ohmic behaviors, when annealed at 530 and 630°C. The effective Schottky barrier heights on diodes made with Ni (5 nm)/Au (5 nm) contacts decrease with increasing annealing temperature. STEM/energy dispersive x-ray (EDX) profiling results exhibit the formation of interfacial In-Ga-Sn-Cu-oxide. XPS results show a shift of the surface Fermi level toward the lower binding energy side upon annealing. Based on the STEM and XPS results, the ohmic formation mechanisms are described and discussed.
URI
http://pubs.kist.re.kr/handle/201004/41346
ISSN
1385-3449
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KIST Publication > Article
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