Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive

Title
Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive
Authors
강민규오승민조광환도영호백동수조봉희강종윤남산윤석진
Keywords
Low-Temperature; PZT; Vanadium; thin film
Issue Date
2012-01
Publisher
Journal of the Electrochemical Society
Citation
VOL 159, NO 1, D9-D12
Abstract
Low-temperature-crystallized PbZr0.52Ti0.48O3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature, and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450℃, and remarkable electrical properties such as a remnant polarization of 4.3 μC/cm2, a coercive field of 49.3 kV/cm, a dielectric constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5% were observed. The present results suggest that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.
URI
http://pubs.kist.re.kr/handle/201004/41358
ISSN
0013-4651
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KIST Publication > Article
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