Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive
- Low-Temperature Crystallization of Sol-Gel Derived PbZr0.52Ti0.48O3 Thin Films with a Vanadium Additive
- 강민규; 오승민; 조광환; 도영호; 백동수; 조봉희; 강종윤; 남산; 윤석진
- Low-Temperature; PZT; Vanadium; thin film
- Issue Date
- Journal of the Electrochemical Society
- VOL 159, NO 1, D9-D12
- Low-temperature-crystallized PbZr0.52Ti0.48O3 (PZT) thin films, prepared using a sol-gel method, with a vanadium additive are
demonstrated. The low crystallization and melting temperatures of vanadium oxide helped to reduce the crystallization temperature,
and improved the grain growth in PZT thin films. Perovskite PZT thin films were obtained at a low annealing temperature of 450℃, and remarkable electrical properties such as a remnant polarization of 4.3 μC/cm2, a coercive field of 49.3 kV/cm, a dielectric
constant of 585 at 1 MHz, a dielectric loss of 0.022 at 1 MHz, and a tunability of 64.5% were observed. The present results suggest
that these low-temperature-crystallized PZT thin films could be used for integrated ferroelectric device applications.
- Appears in Collections:
- KIST Publication > Article
- Files in This Item:
There are no files associated with this item.
- RIS (EndNote)
- XLS (Excel)
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.