Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures

Title
Growth Temperature Effects of In0.4Al0.6As Buffer Layer on the Luminescence Properties of InGaAs/InAlAs Quantum Well Structures
Authors
김희연류미이임주영신상훈김수연송진동
Keywords
InGaAs; InAlAs; GaAs; metamorphic; Multiple quantum wells; Photoluminescence; Time-resolved photoluminescence; InGaAs/InAlAs multiple quantum wells
Issue Date
2011-12
Publisher
한국진공학회지; Journal of the Korean Vacuum Society
Citation
VOL 20, NO 6, 449-455
Abstract
The luminescence properties of In0.5Ga0.5As/In0.5Al0.5As multiple quantum wells (MQWs) grown on In0.4Al0.6As buffer layer have been investigated by using photoluminescence (PL) and time-resolved PL measurements. A 1-μm-thick In0.4Al0.6As buffer layers were deposited at various temperatures from 320℃ to 580℃ on a 500-nm-thick GaAs layer, and then 1-μ m-thick In0.5Al0.5As layers were deposited at 480oC, followed by the deposition of the InGaAs/InAlAs MQWs. In order to study the effects of In0.4Al0.6As layer on the optical properties of the MQWs, four different temperature sequences are used for the growth of In0.4Al0.6As buffer layer. The MQWs consist of three In0.5Ga0.5As wells with different well thicknesses (2.5-nm, 4.0-nm, and 6.0-nm-thick) and 10-nm-thick In0.5Al0.5As barriers. The PL peaks from 4-nm QW and 6-nm QW were observed. However, for the MQWs on the In0.4Al0.6As layer grown by using the largest growth temperature variation (320-580℃), the PL spectrum only showed a PL peak from 6-nm QW. The carrier decay times in the 4-nm QW and 6-nm QW were measured from the emission wavelength dependence of PL decay. These results indicated that the growth temperatures of In0.4Al0.6As layer affect the optical properties of the MQWs.
URI
http://pubs.kist.re.kr/handle/201004/41368
ISSN
1225-8822
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