Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy

Title
Study on the growth characteristics of thick GaN on sapphire substrate using hydride vapor phase epitaxy
Authors
이정욱유지범변동진금동화
Keywords
GaN film; hydride vapor phase epitaxial growth; ZnO buffer layer
Issue Date
1997-06
Publisher
한국재료학회지; Korean journal of materials research
Citation
VOL 7, NO 6, 492-497
URI
http://pubs.kist.re.kr/handle/201004/41446
Appears in Collections:
KIST Publication > Article
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE