Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlxGa1-xAs Cladding Layer

Title
Enhanced Performance of an InGaAs/GaAs Single Quantum Well Laser Diode by Introducing a High Al-Content AlxGa1-xAs Cladding Layer
Authors
김광웅송진동최원준이정일Jung Ho Park
Keywords
Quantum well laser diode; Cladding layer; Optical confinement; Carrier confinement
Issue Date
2006-09
Publisher
Journal of the Korean Physical Society
Citation
VOL 49, NO 3, 1169-1172
URI
http://pubs.kist.re.kr/handle/201004/41564
ISSN
0374-4884
Appears in Collections:
KIST Publication > Article
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