Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor

Title
Annealing effect on dielectric and leakage current characteristics of Mn-doped Ba0.6Sr0.4TiO3 thin films as gate insulators for low voltage ZnO thin film transistor
Authors
강경태김일두임미화김호기홍재민
Keywords
zinc oxide transistor; gate insulator; Mn doping; Barium strontium titanate; electrical properties and measurements
Issue Date
2008-01
Publisher
Thin solid films
Citation
VOL 516, NO 6, 1218-1222
URI
http://pubs.kist.re.kr/handle/201004/41612
ISSN
0040-6090
Appears in Collections:
KIST Publication > Article
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