Enhancement of gate controlled spin-orbit interaction via potential asymmetry of InAs quantum well

Title
Enhancement of gate controlled spin-orbit interaction via potential asymmetry of InAs quantum well
Authors
김경호김형준구현철장준연한석희
Keywords
spin-orbit interaction; potential gradient; InAs quantum well; spin-FET; carrier supply layer; SdH oscillation; gate electric field
Issue Date
2010-01
Publisher
11th Joint MMM-Intermag Conference
Abstract
In summary, we have investigated the Rashba spin-orbit interaction parameter (α) in double-sided doped InAs quantum well structure with respect to the doping densities of two carrier supply layers. The different doping densities allow us to manipulate the potential asymmetry of the InAs quantum well resulting in the large α variation with the gate electric field (Vg). We can select the sign of α by adjusting the doping densities of the CS layers. These experimental observations strongly imply that the strength of SOI can be assisted by the potential asymmetry.
URI
http://pubs.kist.re.kr/handle/201004/41720
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KIST Publication > Conference Paper
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