Electrical properties of amorphous hafnium-indium-zinc-oxide thin film transistors with highly conductive buried layer

Title
Electrical properties of amorphous hafnium-indium-zinc-oxide thin film transistors with highly conductive buried layer
Authors
정유진이상렬
Issue Date
2011-03
Publisher
7th International Symposium on Transparent Oxide Thin Films for Electronics and Optics
URI
http://pubs.kist.re.kr/handle/201004/41769
Appears in Collections:
KIST Publication > Conference Paper
Files in This Item:
There are no files associated with this item.
Export
RIS (EndNote)
XLS (Excel)
XML


qrcode

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.

BROWSE