Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition

Title
Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
Authors
박지훈변동진이중기
Keywords
ECR-MOCVD; Gallium Tin Oxide; Structual and Electirical Properties; Texture Coefficient
Issue Date
2011-08
Publisher
Journal of nanoscience and nanotechnology
Citation
VOL 11, NO 8, 7234-7237
Abstract
Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonancemetal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21×10−3 Ω· cm. In our experimental range, the optimized carrier concentration of 3.71×1018 cm−3 was prepared at the Ga/[O+Sn] mole ratio of 0.35.
URI
http://pubs.kist.re.kr/handle/201004/41785
ISSN
1533-4880
Appears in Collections:
KIST Publication > Article
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