Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
- Structural and Electrical Characteristics of Gallium Tin Oxide Thin Films Prepared by Electron Cyclotron Resonance-Metal Organic Chemical Vapor Deposition
- 박지훈; 변동진; 이중기
- ECR-MOCVD; Gallium Tin Oxide; Structual and Electirical Properties; Texture Coefficient
- Issue Date
- Journal of nanoscience and nanotechnology
- VOL 11, NO 8, 7234-7237
- Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonancemetal
organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin
and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction
(XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline
of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole
ratio play an important role to determine the electrical properties of gallium tin composite oxide thin
films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical
resistivity of 1.21×10−3 Ω· cm. In our experimental range, the optimized carrier concentration of
3.71×1018 cm−3 was prepared at the Ga/[O+Sn] mole ratio of 0.35.
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