Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi5Nb3O15 thin film grown by pulsed laser deposition
- Effects of oxygen pressure and Mn-doping on the electrical and dielectric properties of Bi5Nb3O15 thin film grown by pulsed laser deposition
- 송태근; 조경훈; 최주영; 남산; 강종윤; 윤석진; 김종희
- Issue Date
- Journal of physics D, applied physics
- VOL 42, NO 17, 175402-1-175402-6
- Bi5Nb3O15 (B5N3) thin films grown at temperatures above 500 ℃ developed a crystalline
B5N3 phase that decomposed into a BiNbO4 phase in the film grown at 700 ℃, probably due
to Bi2O3 evaporation. The leakage current density of the B5N3 film grown at 200 ℃ under an
oxygen pressure (OP) of 100mTorr was high at approximately 6.3 × 10−7 A cm−2 at
0.2MVcm−1, with a small breakdown field of 0.24MVcm−1 due to the presence of intrinsic
oxygen vacancies. The electrical properties of the B5N3 films improved with increasing OP
during the growth but the dielectric constant (εr) decreased. The Mn-doping also improved the
electrical properties of the B5N3 films grown under low OP by producing doubly ionized
oxygen vacancies, which decreased the number of the intrinsic oxygen vacancies.
Furthermore, the Mn-doping increased the εr value of the B5N3 film, confirming the
effectiveness of such doping in improving both the electrical and the dielectric properties of
the B5N3 film. In particular, the 5.0 mol% Mn-doped B5N3 film grown at 200 ℃ under an OP
of 100 mTorr exhibited a low leakage current density of 7.9 × 10−8 A cm−2 at 0.2 MV cm−1
and a large breakdown field of 0.4 MV cm−1 with a high εr of 64.
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