Crystallization and Improvement of Electrical Properties of Bi5Nb3O15 Thin Films Crown at Low Temperature
- Crystallization and Improvement of Electrical Properties of Bi5Nb3O15 Thin Films Crown at Low Temperature
- 성태근; 조경훈; 선종우; 송명은; 백동수; 남산; 강종윤; 김종희
- Issue Date
- Japanese Journal of Applied Physics, Part 1- Regular Papers
- VOL 48, NO 11, 111401-1-111401-5
- Amorphous Bi5Nb3O15 (B5N3) phase was formed for the films grown at 350 ℃ under low oxygen pressures (OPs) (≤ 200 mTorr). However,
when OP exceeded 400 mTorr, crystalline Bi3NbO7 (B3N) phase, which is a low temperature transient phase of the crystalline B5N3 phase,
was formed even at 350 ℃. The dielectric constant (k) increased with increasing OP due to the formation of the crystalline B3N phase. The
leakage current density increased with increasing OP, due to the increased surface roughness of the film. Presence of the intrinsic oxygen
vacancies was also responsible for the increased leakage current density. Mn-doping improved the electrical properties of the films by
producing the doubly ionized, extrinsic oxygen vacancies which reduced the number of the intrinsic oxygen vacancies. Mn-doping also
considerably increased the k value of the film to a maximum of 108 for the 5.0 mol% Mn-doped film grown at 350 ℃.
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