Large-scale assembly of highly flexible low-noise devices based on silicon nanowires

Title
Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
Authors
허광박지우양지은고준태권지환전영민김미영조문호홍승훈
Issue Date
2010-04
Publisher
Nanotechnology
Citation
VOL 21, NO 14, 145302-1-145302-6
Abstract
Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received significant attention as high performance flexible devices. However, most previous assembly methods can generate only specifically-shaped devices and require unconventional facilities, which has been a major hurdle for industrial applications. Herein, we report a simple but very efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible substrates using only conventional microfabrication facilities, allowing us to mass-produce highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible devices based on organic conductors or other nanowires. In addition, the gating behaviors and low-noise characteristics of our devices were maintained, even under highly bent conditions.
URI
http://pubs.kist.re.kr/handle/201004/41888
ISSN
0957-4484
Appears in Collections:
KIST Publication > Article
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