Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
- Large-scale assembly of highly flexible low-noise devices based on silicon nanowires
- 허광; 박지우; 양지은; 고준태; 권지환; 전영민; 김미영; 조문호; 홍승훈
- Issue Date
- VOL 21, NO 14, 145302-1-145302-6
- Recently, integrated flexible devices based on silicon nanowires (Si-NWs) have received
significant attention as high performance flexible devices. However, most previous assembly
methods can generate only specifically-shaped devices and require unconventional facilities,
which has been a major hurdle for industrial applications. Herein, we report a simple but very
efficient method for assembling Si-NWs into virtually generally-shape patterns on flexible
substrates using only conventional microfabrication facilities, allowing us to mass-produce
highly flexible low-noise devices. As proof of this method, we demonstrated the fabrication of
highly bendable top-gate transistors based on Si-NWs. These devices showed typical n-type
semiconductor behaviors, and exhibited a much lower noise level compared to previous flexible
devices based on organic conductors or other nanowires. In addition, the gating behaviors and
low-noise characteristics of our devices were maintained, even under highly bent conditions.
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