Microstructures corresponding to multilevel resistances of In3Sb1Te2 phase-change memory

Title
Microstructures corresponding to multilevel resistances of In3Sb1Te2 phase-change memory
Authors
김용인김은태이정용김용태
Keywords
InSbTe; phase-change memory; HRTEM
Issue Date
2011-02
Publisher
Applied physics letters
Citation
VOL 98, NO 9, 091915-1-091915-3
Abstract
The origin of multilevel resistances of In3Sb1Te2 (IST) phase-change random access memory cell has been investigated with high-resolution transmission electron microscopy (HR-TEM). The HR-TEM indicates that the microstructure of IST in the programming volume changes from amorphous to InSb and amorphous at the first state, and InSb and InTe at the second state, and IST at the third state, which are fairly consistent with four different levels of resistance. The resistance difference between the amorphous and the IST is about four orders of magnitude.
URI
http://pubs.kist.re.kr/handle/201004/41905
ISSN
0003-6951
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KIST Publication > Article
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