Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation
- Photoluminescence studies on MBE grown Co-doped ZnO thin films fabricated through ion implantation and swift heavy ion irradiation
- Basavaraj Angadi; Ravi Kumar; 박동희; 최지원; 최원국
- Co-doped ZnO; swift heavy ion irradiation; ferrromagnetic; dilute magnetic semiconductor; DMS; ZnO; Photoluminescence; Swift heavy ion
- Issue Date
- Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms
- VOL 272, 305-308
- The temperature dependant photoluminescence of the Co-doped ZnO thin films, prepared by ion
implantation on the MBE grown ZnO thin films followed by swift heavy ion irradiation, were investigated.
The phenomenon of negative thermal quenching (NTQ), where the photoluminescence (PL) intensity
increases with temperature, in contrast to the usual behavior of decrease in intensity with temperature,
has been observed. The I3 peak and the peaks (a, b, c, d, and e), corresponding to t2g and eg levels of the
crystal field split Co d orbitals exhibit the NTQ behavior. The NTQ temperature range 35–45 K observed in
un-doped ZnO shifts towards lower temperature with the Co doping. The increased number of dopant
related and/or the vibrational/rotational resonance states with lower activation energies, from which
the thermal excitation of the electrons takes place to the initial state of the PL transition, are responsible
for the NTQ behavior.
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