The modulation of Si1-xGex nanowires by correlation of inlet gas ratio with H2 gas content
- The modulation of Si1-xGex nanowires by correlation of inlet gas ratio with H2 gas content
- Woo-Jung Lee,; Jin Won Ma; Jung Min Bae; Sang Han Park; Mann-Ho Cho; 안재평
- Issue Date
- VOL 13, NO 16, 5204-5211
- Si1-xGex nanowires (NWs) were prepared by a Vapor–Liquid–Solid (VLS) procedure using Au as the
catalyst at a fixed growth temperature of 400 ˚C. The alloy composition was adjusted and the growth
rate of the Si1-xGex NWs was achieved by varying the inlet gas ratio and the H2 flow rate. The growth
of Si1-xGex NWs can be explained by two mechanisms that are related to growth kinetics; first,
collisional activation is a dominant factor at flow rates of H2 100 sccm and second, in the case of a H2
flow rate of 200 sccm, the reaction is unimolecular. In addition, a Ge concentration (0.56 < x < 0.91) in
Si1-xGex NWs is observed at a relatively high growth temperature of 400 ˚C as compared with data
reported in the literature. The findings herein indicate that the high Ge concentration (x) can be
attributed to the presence of interstitial Ge atoms in the Si1-xGex NWs, when they are grown under
non-equilibrium conditions. This was confirmed by comparing the measured Ge concentration between
EDX and XRD, Raman and strongly demonstrated by XPS results indicating the development of Ge
interstitial states at lower binding energy, rather than bulk-like bonding.
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