UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node

Title
UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node
Authors
Chi Kyu ChoiChang Young KimR. NavamathavanHeang Seuk LeeJong-Kwan WooMyung Taek HyunHeon Ju Lee정원용
Keywords
Low-k materials; SiOC(eH) film; PECVD; UV irradiation; FT-IR
Issue Date
2011-09
Publisher
Current applied physics
Citation
VOL 11, NO 5, S109-S113
Abstract
Low-dielectric-constant SiOC(-H) thin films were deposited on p-type Si(100) substrates using plasma enhanced chemical vapor deposition (PECVD) from vinyltrimethylsilane (VTMS; CH2=CHSi(CH3)3) and oxygen gas as precursors. To improve the structural, mechanical and electrical characteristics, SiOC(-H) films deposited using PECVD were post-treated by ultraviolet (UV) irradiation for various time intervals. Carbon content of the SiOC(-H) films increased before 240 s of UV irradiation time. But carbon-bonded functional groups of the SiOC(-H) film, in case of 480 s UV irradiation time, is replaced with SieO bond. Because the SieCHn bond groups are broken due to UV irradiation, Therefore, the films are formed with SieO bond rich in the SieOeC(-H) structure. The lowest relative dielectric constant, leakage current density, the elastic modulus and the hardness of SiOC(-H) with 240 s of UV irradiation time were about 2.07, 2.1×10-7A/cm2, 43 GPa, and 3.68 GPa, respectively. The results indicate that the SiOC(-H) films exposed by UV irradiation improve the structural, mechanical, and electrical characteristics.
URI
http://pubs.kist.re.kr/handle/201004/41937
ISSN
1567-1739
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KIST Publication > Article
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