UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node
- UV irradiation effects on the bonding structure and electrical properties of ultra low-k SiOC(-H) thin films for 45 nm technology node
- Chi Kyu Choi; Chang Young Kim; R. Navamathavan; Heang Seuk Lee; Jong-Kwan Woo; Myung Taek Hyun; Heon Ju Lee; 정원용
- Low-k materials; SiOC(eH) film; PECVD; UV irradiation; FT-IR
- Issue Date
- Current applied physics
- VOL 11, NO 5, S109-S113
- Low-dielectric-constant SiOC(-H) thin films were deposited on p-type Si(100) substrates using plasma
enhanced chemical vapor deposition (PECVD) from vinyltrimethylsilane (VTMS; CH2=CHSi(CH3)3) and
oxygen gas as precursors. To improve the structural, mechanical and electrical characteristics, SiOC(-H) films deposited using PECVD were post-treated by ultraviolet (UV) irradiation for various time intervals.
Carbon content of the SiOC(-H) films increased before 240 s of UV irradiation time. But carbon-bonded
functional groups of the SiOC(-H) film, in case of 480 s UV irradiation time, is replaced with SieO bond.
Because the SieCHn bond groups are broken due to UV irradiation, Therefore, the films are formed with
SieO bond rich in the SieOeC(-H) structure. The lowest relative dielectric constant, leakage current
density, the elastic modulus and the hardness of SiOC(-H) with 240 s of UV irradiation time were about
2.07, 2.1×10-7A/cm2, 43 GPa, and 3.68 GPa, respectively. The results indicate that the SiOC(-H) films
exposed by UV irradiation improve the structural, mechanical, and electrical characteristics.
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