Combinatorial growth of Si nanoribbons

Title
Combinatorial growth of Si nanoribbons
Authors
박태언Ki-Young LeeIlsoo Kim장준연Peter VoorheesHeon-Jin Choi
Issue Date
2011-07
Publisher
Nanoscale research letters
Citation
VOL 6, 476-1-476-6
Abstract
Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted VS mechanism for lateral growth.
URI
http://pubs.kist.re.kr/handle/201004/41951
ISSN
19317573
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