Combinatorial growth of Si nanoribbons
- Combinatorial growth of Si nanoribbons
- 박태언; Ki-Young Lee; Ilsoo Kim; 장준연; Peter Voorhees; Heon-Jin Choi
- Issue Date
- Nanoscale research letters
- VOL 6, 476-1-476-6
- Silicon nanoribbons (Si NRs) with a thickness of about 30 nm and a width up to a few micrometers were
synthesized. Systematic observations indicate that Si NRs evolve via the following sequences: the growth of basal
nanowires assisted with a Pt catalyst by a vapor-liquid-solid (VLS) mechanism, followed by the formation of sawlike
edges on the basal nanowires and the planar filling of those edges by a vapor-solid (VS) mechanism. Si NRs
have twins along the longitudinal < 110 > growth of the basal nanowires that also extend in < 112 > direction to
edge of NRs. These twins appear to drive the lateral growth by a reentrant twin mechanism. These twins also
create a mirror-like crystallographic configuration in the anisotropic surface energy state and appear to further
drive lateral saw-like edge growth in the < 112 > direction. These outcomes indicate that the Si NRs are grown by
a combination of the two mechanisms of a Pt-catalyst-assisted VLS mechanism for longitudinal growth and a twinassisted
VS mechanism for lateral growth.
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